| поискавой системы для электроныых деталей |
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MR3500S датащи(PDF) 1 Page - EIC discrete Semiconductors |
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MR3500S датащи(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() MR3500S - MR3510S AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 35 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Cathode to lead, For anode to lead use "R" suffix. * Mounting position : Any * Weight : 2.2 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MR 3500S MR 3501S MR 3502S MR 3504S MR 3506S MR 3508S MR 3510S UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Rectified Forward Current Tc = 150 °C IF(AV) 35 A Maximum Peak Forward Surge Current Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 35 Amps. VF 1.1 V Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 1.0 mA Thermal Resistance (Note 1) R θJC 1.0 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Note : (1) Thermal resistance from junction to case. Single side cooled. Page 1 of 2 Rev. 02 : March 24, 2005 RATING IFSM 400 A MR - S 0.175 (4.45) 0.165 (4.19) 0.342 (8.69) 0.332 (8.43) 0.222 (5.64) 0.218 (5.54) 0.053 (1.35) 0.050 (1.27) Dimensions in inches and ( millimeter ) 1.00 (25.4) MIN. * Pb / RoHS Free www.eicsemi.com |
Аналогичный номер детали - MR3500S |
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Аналогичное описание - MR3500S |
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