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LLDB3 датащи(PDF) 1 Page - EIC discrete Semiconductors |
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LLDB3 датащи(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 1 page ![]() LLDB3, LLDB4 SILICON BI-DIRECTIONAL DIACS The glass passivated, three-layer,two terminal,axial lead, hermetically sealed diacs are designed specifically for triggering thyristors.They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmeter is within four volts with a typical breakover voltage of LLDB3 32 V, LLDB 40 V.These diacs are intended for use in thyrister phase control,circuits for lamp-dimming,universal-motor speed controls,and heat controls. FEATURES : * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL UNIT Minimum Breakover Voltage VBR1 and VBR2 (Min.) V Typical Breakover Voltage VBR1 and VBR2 (Typ.) V Maximum Breakover Voltage VBR1 and VBR2 (Max.) V Maximum Breakover Current I(BR)1 and I(BR)2 200 μA Maximum Breakover Voltage Symmetry [V(BR)1] - [V(BR)2] 3.8 V Minimum Dynamic Breakback Voltage ∆I = [IBR to IF = 10 mA] Maximum Peak Current at Ta = 50 °C (10 μs duration, 120 cycle repetition rate) Maximum Peak output Voltage at Ta = 50 °C ** eP ±3 V Thermal Impedance Junction to Ambient RӨJA 60 °C/W Operating Junction Temperature Range TJ - 40 to + 100 °C Storage Temperature Range TSTG - 40 to + 150 °C Page 1 of 1 Rev. 00: November 12, 2009 RATING LLDB3 LLDB4 28 35 32 40 36 45 | ΔV ± | 5.0 V IP ±2 A **CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST 0.142(3.6) 0.134(3.4) φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) Cathode Mark MiniMELF (SOD-80C) Dimensions in inches and ( millimeters ) Mounting Pad Layout 0.049 (1.25)Min. 0.197 (5.00) REF 0.079 (2.00)Min. www.eicsemi.com |
Аналогичный номер детали - LLDB3 |
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Аналогичное описание - LLDB3 |
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