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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F302X8 датащи(PDF) 80 Page - STMicroelectronics |
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STM32F302X8 датащи(HTML) 80 Page - STMicroelectronics |
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80 / 139 page  Electrical characteristics STM32F302x6 STM32F302x8 80/139 DS9896 Rev 8 Figure 18. HSI oscillator accuracy characterization results for soldered parts Low-speed internal (LSI) RC oscillator 6.3.9 PLL characteristics The parameters given in Table 45 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 23. Table 44. LSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 50 kHz ΔfLSI(T) Temperature-related frequency drift(2) 2. Guaranteed by characterization results. -9 - 9 % tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 85 µs IDD(LSI)(3) LSI oscillator power consumption - 0.75 1.2 µA -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 MSv30985V6 4.0% 3.0% 2.0% 1.0% 0.5% 1.5% 2.5% 3.5% 4.5% -0.5% -1% -1.5% -2.0% 0 -2.5% -3.0% -3.5% -4.0% -4.5% -5.0% Max Min |
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