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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F302X6 датащи(PDF) 79 Page - STMicroelectronics |
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STM32F302X6 датащи(HTML) 79 Page - STMicroelectronics |
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79 / 139 page  DS9896 Rev 8 79/139 STM32F302x6 STM32F302x8 Electrical characteristics 117 6.3.8 Internal clock source characteristics The parameters given in Table 43 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 23. High-speed internal (HSI) RC oscillator Table 43. HSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 8 - MHz TRIM HSI user trimming step - - - 1(2) 2. Guaranteed by design. % DuCy(HSI) Duty cycle - 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator TA = -40 to 105°C -2.8(3) 3. Guaranteed by characterization results. -3.8(3) % TA = -10 to 85°C -1.9(3) -2.3(3) TA = 0 to 85°C -1.9(3) -2(3) TA = 0 to 70°C -1.3(3) -2(3) TA = 0 to 55°C -1(3) -2(3) TA = 25°C(4) 4. Factory calibrated, parts not soldered. -1 - 1 tsu(HSI) HSI oscillator startup time - 1(2) -2(2) µs IDDA(HSI) HSI oscillator power consumption - - 80 100(2) µA |
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