Document Number: 91241

www.vishay.com

S11-0443-Rev. B, 14-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFPC50A, SiHFPC50A

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGY

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

600

0.58

70

19

28

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFPC50APbF

SiHFPC50A-E3

SnPb

IRFPC50A

SiHFPC50A

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

Continuous Drain Current

11

A

7.0

44

Linear Derating Factor

1.4

W/°C

920

mJ

11

A

18

mJ

Maximum Power Dissipation

180

W

dV/dt

4.9

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply