IRFP26N60LPBF datasheet(2/11 Pages) VISHAY

2 / 11 page

IRFP26N60L, SiHFP26N60L

www.vishay.com

Vishay Siliconix

S15-0456-Rev. D, 16-Mar-15

Document Number: 91218

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

Maximum Junction-to-Case (Drain)

RthJC

-0.27

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

600

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.33

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

3.0

5.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

2.0

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 10 A b

-0.21

0.25

Forward Transconductance

gfs

VDS = 50 V, ID = 16 A

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

5020

Output Capacitance

Coss

450

Reverse Transfer Capacitance

Crss

-34

Effective Output Capacitance

Coss eff.

VGS = 0 V

VDS = 0 V to 480 V c

230

Effective Output Capacitance

(Energy related)

Coss eff. (ER)

170

Total Gate Charge

VGS = 10 V

ID = 26 A, VDS = 480 V,

see fig. 7 and 15b

180

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 26 A,

Rg = 4.3

Ω,VGS = 10 V

see fig. 11a and 11b b

-31

Rise Time

110

Turn-Off Delay Time

td(off)

-47

Fall Time

-42

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Current a

ISM

100

Body Diode Voltage

VSD

TJ = 25 °C, IS = 26 A, VGS = 0 V b

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 26 A

170

250

TJ = 125 °C, dI/dt = 100 A/μs b

210

320

Body Diode Reverse Recovery Charge

Qrr

TJ = 25 °C, IF = 26 A, VGS = 0 V b

670

1000

TJ = 125 °C, dI/dt = 100 A/μs b

1050

1570

Reverse Recovery Current

IRRM

TJ = 25 °C

7.3

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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