STM32G030F6 datasheet(49/94 Pages) STMICROELECTRONICS

49 / 94 page

DS12991 Rev 4

49/94

STM32G030x6/x8

Electrical characteristics

5.3.6

Wakeup time from low-power modes and voltage scaling

transition times

The wakeup times given in Table 32 are the latency between the event and the execution of

the first user instruction.

Table 32. Low-power mode wakeup times(1)

Symbol

Parameter

Conditions

Typ

Max

Unit

tWUSLEEP

Wakeup time from

Sleep to Run

mode

-11

CPU

cycles

tWULPSLEEP

Wakeup time from

Low-power sleep

mode

Transiting to Low-power-run-mode execution in Flash

memory not powered in Low-power sleep mode;

HCLK = HSI16 / 8 = 2 MHz

tWUSTOP0

Wakeup time from

Stop 0

Transiting to Run-mode execution in Flash memory not

powered in Stop 0 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

5.6

µs

Transiting to Run-mode execution in SRAM or in Flash

memory powered in Stop 0 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

22.4

tWUSTOP1

Wakeup time from

Stop 1

Transiting to Run-mode execution in Flash memory not

powered in Stop 1 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

9.0

11.2

µs

Transiting to Run-mode execution in SRAM or in Flash

memory powered in Stop 1 mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1 or Range 2

57.5

Transiting to Low-power-run-mode execution in Flash

memory not powered in Stop 1 mode;

HCLK = HSI16/8 = 2 MHz;

Regulator in low-power mode (LPR = 1 in PWR_CR1)

25.3

Transiting to Low-power-run-mode execution in SRAM or

in Flash memory powered in Stop 1 mode;

HCLK = HSI16 / 8 = 2 MHz;

Regulator in low-power mode (LPR = 1 in PWR_CR1)

23.5

tWUSTBY

Wakeup time from

Standby mode

Transiting to Run mode;

HCLK = HSI16 = 16 MHz;

Regulator in Range 1

14.5

µs

tWULPRUN

Wakeup time from

Low-power run

mode(2)

Transiting to Run mode;

HSISYS = HSI16/8 = 2 MHz

µs

1. Based on characterization results, not tested in production.

2. Time until REGLPF flag is cleared in PWR_SR2.

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