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SBB3089Z датащи(PDF) 2 Page - STMicroelectronics |
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SBB3089Z датащи(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() SBB3089Z 50MHz to 6000MHz Gain Block Data Sheet, June 8, 2021 | Subject to change without notice 2 of 9 www.qorvo.com ® Absolute Maximum Ratings Parameter Rating Storage Temperature −55 to 150 °C RF Input Power, CW, 50 Ω, T=+25 °C +20 dBm Device Voltage (VCC) +6 V Device Current (ICC) 100 mA Junction Temperature (TJ) +150 °C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Recommended Operating Conditions Parameter Min Typ Max Units TCASE −40 +85 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Application of conditions to the device outside the Recommended Operating Conditions may reduce device reliability and performance. Electrical Specifications Parameter Conditions (1) Min Typ Max Units Operational Frequency Range 50 6000 MHz Gain 850MHz 15.1 16.6 18.1 dB 1950MHz 14.9 16.4 17.9 dB 2400MHz 16.3 dB Input Return Loss 1950MHz 16 21 dB Output Return Loss 1950MHz 19 25.5 dB Output P1dB 850MHz +15.6 dBm 1950MHz +14.2 +15.2 dBm 2400MHz +15.4 dBm Output IP3 Pout= -5 dBm/tone, ∆f = 1 MHz, Center Freq.= 850MHz +30 dBm Pout= -5 dBm/tone, ∆f = 1 MHz, Center Freq.= 1950MHz +27.5 +29.5 dBm Pout= -5 dBm/tone, ∆f = 1 MHz, Center Freq.= 2400MHz +29.5 dBm Noise Figure 1950MHz 3.9 4.9 dB Device Operating Voltage (VCC) RDC=20 Ω, VS=+5.0V 4.2 4.3 V Device Operating Current (ICC) RDC=20 Ω, VS=+5.0V 38 42 46 mA Thermal Resistance, θjc Junction to case 80 °C/W Notes: 1. Test conditions unless otherwise noted: VS= +5.0V, VCC = +4.2 V, ICC = 42mA, RDC=20Ω, Temp= +25 °C , 50 Ω system. 2. Supply voltage (VS) and bias resistor (RDC) values are related by: RDC=(VS-VCC)/ICC |
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