IRFD024

www.vishay.com

Vishay Siliconix

S21-0885-Rev. D, 30-Aug-2021

1

Document Number: 91126

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• For Automatic insertion

• End stackable

• 175 °C operating temperature

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

60

0.10

25

5.8

11

Configuration

Single

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

ORDERING INFORMATION

Package

HVMDIP

Lead (Pb)-free

IRFD024PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

60

V

Gate-source voltage

± 20

Continuous drain current

2.5

A

1.8

20

Linear derating factor

0.0083

W/°C

91

mJ

Maximum power dissipation

1.3

W

dV/dt

4.5

V/ns

Operating junction and storage temperature range

-55 to +175

°C

For 10 s

300

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

-

120

°C/W