IRFIB7N50APBF datasheet(2/10 Pages) VISHAY

2 / 10 page

IRFIB7N50A

www.vishay.com

Vishay Siliconix

S21-0975-Rev. D, 11-Oct-2021

Document Number: 91176

For technical questions, contact: hvmos.techsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

d. Uses IRFB11N50A, SiHFB11N50A data and test conditions

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-65

°C/W

Maximum junction-to-case (drain)

RthJC

-2.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-ssource breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mAd

610

mV/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-source leakage

IGSS

VGS = ± 30 V

± 100

Zero gate voltage drain current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 4.0 Ab

0.52

Forward transconductance

gfs

VDS = 50 V, ID = 6.6 Ad

6.1

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5 d

1423

Output capacitance

Coss

208

Reverse transfer capacitance

Crss

-8.1

Output capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

2000

VDS = 400 V, f = 1.0 MHz

Effective output capacitance

Coss eff.

VDS = 0 V to 400 V c, d

-97

Total gate charge

VGS = 10 V

ID = 11 A, VDS = 400 V

see fig. 6 and 13 b, d

Gate-source charge

Qgs

Gate-drain charge

Qgd

Turn-on delay time

td(on)

VDD = 250 V, ID = 11 A

RG = 9.1

Ω, RD = 22 Ω,

see fig. 10b, d

-14

Rise time

-35

Turn-off delay time

td(off)

-32

Fall time

-28

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

6.6

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 11 A, VGS = 0 V b

1.5

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μs b, d

510

770

Body diode reverse recovery charge

Qrr

-3.4

5.1

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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