IRF720SPBF datasheet(3/10 Pages) VISHAY

3 / 10 page

IRF720S, SiHF720S, IRF720L, SiHF720L

www.vishay.com

Vishay Siliconix

S20-0682-Rev. F, 07-Sep-2020

Document Number: 91044

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91044_01

20 µs Pulse Width

C = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

100

101

100

10-1

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10-2

10-1

101

100

10-1

100

101

VDS, Drain-to-Source Voltage (V)

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

C = 150 °C

91044_02

4.5 V

10-2

10-1

0.01

0.1

456789

GS, Gate-to-Source Voltage (V)

J = 150 °C

J = 25 °C

DS = 26.2V

D = 3.3 A

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

91044_04

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

3.5

1000

800

600

400

200

100

101

VDS, Drain-to-Source Voltage (V)

iss

rss

oss

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

91044_05

QG, Total Gate Charge (nC)

DS = 80 V

DS = 200 V

For test circuit

see figure 13

DS = 320 V

91044_06

D = 3.3 A

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