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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L051F3 датащи(PDF) 64 Page - STMicroelectronics |
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STM8L051F3 датащи(HTML) 64 Page - STMicroelectronics |
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64 / 96 page  Electrical parameters STM8L051F3 64/96 DS9178 Rev 4 Low speed internal RC oscillator (LSI) In the following table, data is based on characterization results, not tested in production. Figure 15. Typical LSI frequency vs. VDD Table 31. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.8 V to 3.6 V, TA = -40 to 85 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency - 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - - - 200(2) 2. Guaranteed by design. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 - 11 % 25 27 29 31 33 35 37 39 41 43 45 1.8 2.1 2.6 3.1 3.6 -40°C 25°C 85°C ai18219b VDD [V] |
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