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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32H750VB датащи(PDF) 115 Page - STMicroelectronics |
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STM32H750VB датащи(HTML) 115 Page - STMicroelectronics |
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115 / 337 page  DS12556 Rev 6 115/336 STM32H750VB STM32H750ZB STM32H750IB STM32H750XB Electrical characteristics (rev Y) 311 6.3.7 Wakeup time from low-power modes The wakeup times given in Table 39 are measured starting from the wakeup event trigger up to the first instruction executed by the CPU: • For Stop or Sleep modes: the wakeup event is WFE. • WKUP (PC1) pin is used to wakeup from Standby, Stop and Sleep modes. All timings are derived from tests performed under ambient temperature and VDD=3.3 V. Table 39. Low-power mode wakeup timings Symbol Parameter Conditions Typ(1) Max(1) Unit tWUSLEEP(2) Wakeup from Sleep - 9 10 CPU clock cycles tWUSTOP(2) Wakeup from Stop VOS3, HSI, Flash memory in normal mode 4.4 5.6 µs VOS3, HSI, Flash memory in low-power mode 12 15 VOS4, HSI, Flash memory in normal mode 15 20 VOS4, HSI, Flash memory in low-power mode 23 28 VOS5, HSI, Flash memory in normal mode 30 71 VOS5, HSI, Flash memory in low-power mode 38 47 VOS3, CSI, Flash memory in normal mode 27 37 VOS3, CSI, Flash memory in low power mode 36 50 VOS4, CSI, Flash memory in normal mode 38 48 VOS4, CSI, Flash memory in low-power mode 47 61 VOS5, CSI, Flash memory in normal mode 52 64 VOS5, CSI, Flash memory in low-power mode 62 77 tWUSTOP2(2) Wakeup from Stop, clock kept running VOS3, HSI, Flash memory in normal mode 2.6 3.4 VOS3, CSI, Flash memory in normal mode 26 36 tWUSTDBY(2) Wakeup from Standby mode - 390 500 1. Guaranteed by characterization results. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction. |
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