QPL1002

0.03

– 3 GHz GaN LNA

Data Sheet Rev. A, June 26, 2017 | Subject to change without notice

- 2 of 14 -

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Recommended Operating Conditions

Parameter

Value

Drain Voltage

12 V

Drain Current (quiescent, IDQ)

50 mA

Gate Voltage (typical)

-2.5 V

Control Voltage (typical)

+2 V

Operating Temperature Range

−40 to 85 °C

Electrical specifications are measured at specified test

conditions.

Specifications

are

not

guaranteed

over

all

recommended operating conditions.

Absolute Maximum Ratings

Parameter

Value

Drain Voltage (VD)

20.0 V

Drain Current (IDQ)

300 mA

Gate Voltage Range (VG)

0 to −5 V

Gate Current (IG)

20 mA

Control Voltage (VC)

-5V to VD

Control Current (IC)

20 mA

RF Input Power (50 Ω, 85 °C)

37 dBm

275 °C

Mounting Temperature (30 seconds)

260 °C

Storage Temperature

−55 to 150 °C

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

Electrical Specifications

Test conditions, unless otherwise noted: VD = 12 V, VC = +2V, IDQ = 50 mA, 25 °C. Data de-embedded to device reference plane

Parameter

Min

Typical

Max

Units

Frequency

0.03

3

GHz

Small Signal Gain

17

dB

Noise Figure

1.2

dB

1-dB Compression Point

23

dBm

Input Return Loss

12

dB

Output Return Loss

11

dB

Robustness (@ 50 Ohm, 85C)

37

dBm

Output TOI (@Pout=18 dBm/tone, 10 MHz tone spacing)

30

dBm

Gain Temperature Coefficient

−0.017

dB/°C

Recommended Darin Voltage

12

15

V