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MIC4420 датащи(PDF) 13 Page - Microchip Technology

номер детали MIC4420
подробное описание детали  6A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
PDF  26 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC4420 датащи(HTML) 13 Page - Microchip Technology

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DS20006092B-page 13
MIC4420/9
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation
calculations the 1/2 is removed. This equation also
shows that it is good practice not to place more voltage
on the capacitor than is necessary, as dissipation
increases as the square of the voltage applied to the
capacitor. For a driver with a capacitive load:
EQUATION 4-3:
4.4.3
INDUCTIVE LOAD POWER
DISSIPATION
For inductive loads the situation is more complicated.
For the part of the cycle in which the driver is actively
forcing current into the inductor, the situation is the
same as it is in the resistive case:
EQUATION 4-4:
However, in this instance the RO required may be either
the on resistance of the driver when its output is in the
high state, or its on resistance when the driver is in the
low state, depending on how the inductor is connected,
and this is still only half the story. For the part of the
cycle when the inductor is forcing current through the
driver, dissipation is best described in Equation 4-5 in
which VD is the forward drop of the clamp diode in the
driver (generally around 0.7V).
EQUATION 4-5:
The two parts of the load dissipation must be summed
in to produce PL.
EQUATION 4-6:
4.4.4
QUIESCENT POWER DISSIPATION
Quiescent power dissipation (PQ, as described in the
Input Stage section) depends on whether the input is
high or low. A low input will result in a maximum current
drain (per driver) of ≤0.2 mA; a logic high will result in a
current drain of ≤2.0 mA. Quiescent power can
therefore be found from:
EQUATION 4-7:
4.4.5
TRANSITION POWER DISSIPATION
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for
a very brief interval, both the N- and P-channel
MOSFETs in the output totem-pole are ON
simultaneously, and a current is conducted through
them from +VS to ground. The transition power
dissipation is approximately:
EQUATION 4-8:
Total power dissipation (PD), then, as previously
described, is:
EQUATION 4-9:
PL f C
VS
2
=
Where:
f
= Operating frequency.
C
= Load capacitance.
VS
= Driver supply voltage.
PL1 I
2 R
O
D
=
PL2 I VD
1 D
=
PL PL1 PL2
+
=
PQ VS D IH
1 D
+
IL
=
Where:
IH
= Quiescent current with input high.
IL
= Quiescent current with input low.
D
= Duty cycle.
VS
= Power supply voltage.
PT 2 f
VS
A s
=
Where:
A•s = A time-current factor derived from the typical
characteristic curves.
PD PL PQ PT
+
+
=



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