IRFPG30 datasheet(2/11 Pages) VISHAY

2 / 11 page

IRFPG30

www.vishay.com

Vishay Siliconix

S22-0057-Rev. C, 31-Jan-2022

Document Number: 91252

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-40

°C/W

Case-to-sink, flat, greased surface

RthCS

0.24

Maximum junction-to-case (drain)

RthJC

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

1000

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

1.4

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-source leakage

IGSS

VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VDS = 1000 V, VGS = 0 V

100

μA

VDS = 800 V, VGS = 0 V, TJ = 125 °C

500

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 1.9 A b

5.0

Forward transconductance

gfs

VDS = 50 V, ID = 1.9 A b

2.4

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-980

Output capacitance

Coss

-140

Reverse transfer capacitance

Crss

-50

Total gate charge

VGS = 10 V

ID = 3.1 A, VDS = 400 V

see fig. 6 and 13 b

Gate-source charge

Qgs

Gate-drain charge

Qgd

Turn-on delay time

td(on)

VDD = 500 V, ID = 3.1 A,

Rg = 12

Ω, RD = 170 Ω, see fig. 10 b

-12

Rise time

-24

Turn-off delay time

td(off)

-89

Fall time

-29

Internal drain inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0

Internal source inductance

-13

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

3.1

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 3.1 A, VGS = 0 V b

1.8

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs b

410

620

Body diode reverse recovery charge

Qrr

-1.3

2.0

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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