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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BAT54L датащи(PDF) 3 Page - FutureWafer Tech Co.,Ltd |
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BAT54L датащи(HTML) 3 Page - FutureWafer Tech Co.,Ltd |
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3 / 21 page  BAT54 Family Surface Mount Schottky Barrier Diode 3 Document No.: F41806F 07-FEB-2022 V 2.2 www.futurewafer.com.tw FQE-001-04 Average Temperature, T A (°C) Fig 1. Power Derating Curve 3-1. Electrical Characteristics 3. Electrical Property 3-2. Thermal Characteristics 3-3. Ratings and Characteristics Curve-Fig 1~2 Parameter Symbol Package Values Units R thJA SOT23, SOD123, DFN1006-2L 500 °C/W Junction-Ambient SOT323, SOT363, SOD323, SOD323FL 550 SOD523FL 600 Parameter Symbol Condition Min. Max. Units Reverse Breakdown Voltage V BR I R = 100uA T A = 25°C - 30 V Forward Voltage V F I F = 0.1mA - 240 mV I F = 1mA - 320 I F = 10mA - 400 I F = 30mA - 500 I F = 100mA - 800 Reverse Recovery Time t rr - 5.0 nS - Reverse Leakage Current I R @ V R = 30V T A = 25°C - 2.0 uA Junction Capacitance C J Pin Capacitance to GND. V dc = 0V, f = 1MHZ - 10 pF T A = 25°C Fig 2. Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage, V F (V) T A = 85°C T A = 125°C |
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