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SI7465DP датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI7465DP
подробное описание детали  P-Channel 60 V (D-S) MOSFET
PDF  12 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7465DP датащи(HTML) 2 Page - Vishay Siliconix

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Si7465DP
www.vishay.com
Vishay Siliconix
S13-2263-Rev. D, 04-Nov-13
2
Document Number: 73113
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 μA
-1
-3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = -60 V, VGS = 0 V
-1
μA
VDS = -60 V, VGS = 0 V, TJ = 70 °C
-10
On-State Drain Currenta
ID(on)
VDS  -5 V, VGS = -10 V
-25
A
Drain-Source On-State Resistancea
RDS(on)
VGS = -10 V, ID = -5 A
0.051
0.064
VGS = -4.5 V, ID = -4.5 A
0.064
0.080
Forward Transconductancea
gfs
VDS = -15 V, ID = -5 A
16
S
Diode Forward Voltagea
VSD
IS = -2.9 A, VGS = 0 V
-0.8
-1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = -30 V, VGS = -10 V, ID = -5 A
26
40
nC
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
7
Gate Resistance
Rg
7
Turn-On Delay Time
td(on)
VDD = -30 V, RL = 30 
ID  -1 A, VGEN = –10 V, Rg = 6 
815
ns
Rise Time
tr
915
Turn-Off Delay Time
td(off)
65
100
Fall Time
tf
30
45
Source-Drain Reverse Recovery Time
trr
IF = -5 A, dI/dt = 100 A/μs
41
70
0
5
10
15
20
25
30
0
2468
10
VGS = 10 V thru 5 V
3 V
VDS - Drain-to-Source Voltage (V)
4 V
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 °C
TC= 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)



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