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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LN184 датащи(PDF) 1 Page - Panasonic Semiconductor |
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LN184 датащи(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page  1 Infrared Light Emitting Diodes ø4.0 ±0.1 2.45 ±0.25 ø4.6 ±0.15 ø5.75max. 2-ø0.45 ±0.05 Unit : mm 1: Anode 2: Cathode 1 2 Spherical lens Glass window LN184 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Power dissipation PD 190 mW Forward current (DC) IF 90 mA Pulse forward current IFP* 230 mA Reverse voltage (DC) VR 3V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C * Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5% Features High-power output, high-efficiency : PO = 5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λ P = 880 nm (typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Radiant power PO IF = 100mA 3.5 mW Peak emission wavelength λ P IF = 100mA 880 nm Spectral half band width ∆λ IF = 100mA 50 nm Forward voltage (DC) VF IF = 100mA 1.55 1.9 V Reverse current (DC) IR VR = 3V 10 µA Rise time tr IFP = 100mA 20 ns Fall time tf IFP = 100mA 20 ns Half-power angle θ The angle in which radiant intencity is 50% 20 deg. |
Аналогичный номер детали - LN184 |
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Аналогичное описание - LN184 |
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