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P4SMFJ датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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P4SMFJ датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 7 page ![]() Rev : 01.06.2019 www.leiditech.com 2/7 Maximum Ratings and Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power Dissipation at TA=25℃ by 10x1000μs waveform (Fig.2)(Note 1) (Note 2) PPPM 400 W Power Dissipation on infinite heat sink at TA=50℃ PD 6.5 W Peak Forward Surge Current, 8.3ms Single Half Sine Wave Unidirectional only(Note 3) IFSM 300 A Maximum Instantaneous Forward Voltage at 100A for Unidirectional only VF 3.5V/5.0 V Operating Junction and Storage Temperature Range TJ, TSTG -55 to + 150 ℃ Typical Thermal Resistance Junction to Lead RuJL 15 ℃/W Typical Thermal Resistance Junction to Ambient RuJA 75 ℃/W Notes: 1. Non-repetitive current pulse, per Fig.3and derated above TA=25℃ per Fig. 2. 2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. Surface Mount – 400W > Series P4SMFJ |
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