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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AO4607 датащи(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4607 датащи(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 8 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol VDS IDM TJ, TSTG W TA=70°C 1.28 Junction and Storage Temperature Range -55 to 150 °C Pulsed Diode Forward CurrentB 20 Power DissipationA TA=25°C PD 2 30 -30 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel W 6.9 5.8 30 2 1.28 -5 -6 2 1.28 A Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain CurrentB -30 TA=70°C Power Dissipation TA=25°C PD Reverse Voltage 30 V Continuous Forward Current A TA=25°C ID 3 A TA=70°C 2 Junction and Storage Temperature Range Parameter Maximum Schottky Units -55 to 150 -55 to 150 AO4607 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 6.9A (VGS=10V) -6A (VGS=1-0V) RDS(ON) RDS(ON) < 28mΩ (VGS=10V) < 35mΩ (VGS = -10V) < 42mΩ (VGS=4.5V) < 58mΩ (VGS =- 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n- channel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical. G1 S1 G2 S2/A D1 D1 D2/K D2/K 1 2 3 4 8 7 6 5 SOIC-8 G D S n-channel p-channel G D S2 K A Alpha & Omega Semiconductor, Ltd. |
Аналогичный номер детали - AO4607 |
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Аналогичное описание - AO4607 |
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