ECONOPACK3 datasheet(2/4 Pages) INFINEON

2 / 4 page

SIGC156T120R2C

Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003

MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Collector-emitter voltage, Tj=25 °C

V CE

1200

DC collector current, limited by Tjmax

I C

1 )

Pulsed collector current, tp limited by Tjmax

I cpuls

300

Gate emitter voltage

V GE

±20

Operating junction and storage temperature

Tj, Tstg

-55 ... +150

°C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Collector-emitter breakdown voltage

V(BR)CES

VGE=0V , IC=5mA

1200

Collector-emitter saturation voltage

VCE(sat)

VGE=15V, IC=100A

2.0

2.5

3.0

Gate-emitter threshold voltage

VGE(th)

IC=4mA , VGE=VCE

4.5

5.5

6.5

Zero gate voltage collector current

ICES

VCE=1200V , VGE=0V

600

µA

Gate-emitter leakage current

IGES

VCE=0V , VGE=20V

600

Integrated gate resistor

RGint

Ω

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Input capacitance

Ciss

6.5

Output capacitance

Coss

Reverse transfer capacitance

Crss

V CE=25V,

V GE=0V,

f =1MHz

0.5

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Turn-on delay time

t d(on)

160

320

Rise time

t r

160

Turn-off delay time

t d(off)

400

520

Fall time

t f

Tj=125 ° C

V CC =600V,

I C =100A,

V GE=+15/ - 15V,

RG=6.8 Ω

100

1) values also influenced by parasitic L- and C- in measurement and package.

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