KSH13005 datasheet(1/2 Pages) ISC

номер детали	KSH13005

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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isc Silicon NPN Power Transistor

KSH13005

DESCRIPTION

·

Collector–Emitter Sustaining Voltage

: VCEO(SUS) = 400V(Min.)

·

Collector Saturation Voltage

: VCE(sat) = 0.6(Max) @ IC= 2.0A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in high-voltage, high-speed, power swit-

ching in inductive circuit, they are particularly suited for

115 and 220V switchmode applications such as switching

regulators,inverters,Motor controls,Solenoid/Relay drivers

and deflection circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-peak

8

A

PC

Collector Power Dissipation

TC=25℃

75

W

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃

/W

Аналогичный номер детали - KSH13005

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