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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISCP233N датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCP233N датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor ISCP233N DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO = -250V(Min) · High DC Current Gain- : hFE= 60-200@IC= -1A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·· Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -1.5 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - ISCP233N |
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Аналогичное описание - ISCP233N |
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