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LTC3252 датащи(PDF) 3 Page - Analog Devices |
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LTC3252 датащи(HTML) 3 Page - Analog Devices |
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3 / 14 page ![]() LTC3290 3 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3290 is tested under pulsed load conditions such that TJ ≈ TA. The LTC3290E is guaranteed to meet specifications from 0°C to 85°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3290I is guaranteed over the –40°C to 125°C operating junction temperature range, the LTC3290H is guaranteed over the –40°C to 150°C operating junction temperature range and the LTC3290MP is guaranteed over the –55°C to 150°C operating junction temperature range. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental factors. The junction temperature (TJ, in °C) is calculated from the ambient temperature (TA, in °C) and power dissipation (PD, in Watts) according to the formula: TJ = TA + (PD • θJA), where θJA = 45°C/W is the package thermal impedance. Note 3: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperatures will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may result in device degradation or failure. Note 4: This IC includes overvoltage protection that is intended to protect the device during momentary overload conditions. Pin voltages will exceed ABSMAX voltage ratings of the part while the protection is active. Continuous operation above the ABSMAX voltage ratings may result in device degradation or failure. Note 5: Current limit is a protection feature. Refer to Available Output Current section in Applications Information for additional information. During a short-circuit event, the current limit is folded back further to reduce power dissipation. The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2), VIN = EN = 12V, VAUX = 5V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Boost Charge Pump VIN Input Supply Voltage Range l 4.5 55 V VAUX Auxiliary Supply Voltage Range l 4.5 55 V (VIN + VAUX) Sum of Input Supply Voltages l 9 55 V (VIN + VAUX)_OV Input Overvoltage Rising Threshold Hysteresis (VIN + VAUX) Rising, VSET = Hig (Note 4) 63 65 4 67 V V VOUT_OV Output Overvoltage Rising Threshold Hysteresis VOUT Rising (Note 4) 63 65 4 67 V V IVIN VIN Quiescent Current Shutdown, EN = 0V IVOUT = 0mA 3 15 5 30 µA µA IVAUX VAUX Quiescent Current Shutdown, EN = 0V IVOUT = 0mA 1 1 3 3 µA µA VFB FB Regulation Voltage l 0.98 1 1.02 V ROL Effective Open Loop Output Resistance 65 Ω ICL_VOUT VOUT Current Limit VOUT Not in Regulation (Note 5) l 100 150 200 mA VENH Enable Pin Threshold Rising l 1.1 2 V VENL Enable Pin Threshold Falling l 0.4 1 V VSETH VSET Pin Threshold Rising l 1.1 2 V VSETL VSET Pin Threshold Falling l 0.4 1 V IEN Enable Pin Leakage Current –1 0 1 µA VPG_RISE_BST PGOOD Pin Threshold Rising in Boost % of Final Regulation Voltage, VSET = GND l 95 98 % VPG_FALL_BST PGOOD Pin Threshold Falling in Boost % of Final Regulation Voltage, VSET = GND l 88 91 % VPG_RISE_TRK PGOOD Pin Threshold Rising in Tracking Offset from Programmed VOUT –1.5 V VPG_FALL_TRK PGOOD Pin Threshold Falling in Tracking Offset from Programmed VOUT –1.6 V IPGOOD_HIGH PGOOD Output High Leakage Current VPGOOD = 3V l –1 1 µA VPGOOD_LOW PGOOD Output Low Voltage IPGOOD = 0.2mA l 0.1 0.4 V |
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