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BFR183 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали BFR183
подробное описание детали  isc Silicon NPN RF Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFR183 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN RF Transistor
BFR183
DESCRIPTION
·
High Power Gain
·
High Current Gain Bandwidth Product
·
Low Noise Figure
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for RF frontend in wideband applications in the
GHz range,such as analog and digital cellular telephones,
cordless telephones(CT1, CT2,DEC, etc.).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
65
mA
PC
Collector Power Dissipation
@TC=25℃
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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