AOU448 datasheet(1/5 Pages) AOSMD

номер детали	AOU448

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

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производитель	AOSMD [Alpha & Omega Semiconductors]

домашняя страница	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

44

55

RθJC

23

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

Steady-State

°C/W

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

30

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

Maximum

Units

Parameter

TC=25°C

TC=100°C

ID

75

56

200

Junction and Storage Temperature Range

A

PD

°C

50

25

-55 to 175

TC=100°C

Avalanche Current

C

30

Repetitive avalanche energy L=0.1mH

C

45

A

mJ

G

D

S

TO-251

Top View

Drain Connected

to Tab

AOU448

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 75A

RDS(ON) < 5.6mΩ (VGS = 10V)

RDS(ON) < 9mΩ (VGS = 4.5V)

General Description

The AOU448 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications. Standard

Product AOU448 is Pb-free (meets ROHS & Sony

259 specifications). AOU448L is a Green Product

ordering option. AOU448 and AOU448L are

electrically identical.

G

D

S

Alpha & Omega Semiconductor, Ltd.

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Аналогичный номер детали - AOU448

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