AOU414 datasheet(1/5 Pages) AOSMD

номер детали	AOU414

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

производитель	AOSMD [Alpha & Omega Semiconductors]

домашняя страница	http://www.aosmd.com

Logo

1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

100

125

RθJL

0.7

1.5

V

±20

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

°C/W

Pulsed Drain Current

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Ambient

A

Steady-State

Power Dissipation

B

TC=25°C

PD

Avalanche Current

C

Junction and Storage Temperature Range

Repetitive avalanche energy L=0.1mH

C

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

B

30

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

85

73

A

ID

200

-55 to 175

mJ

W

50

°C

100

TC=100°C

140

30

A

AOU414

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 85A (VGS = 10V)

RDS(ON) < 5.7mΩ (VGS = 10V)

RDS(ON) < 7.5mΩ (VGS = 4.5V)

General Description

The AOU414 uses advanced trench technology to

provide excellent RDS(ON), shoot-through immunity

and body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core

power conversion. Standard Product AOU414 is Pb-

free (meets ROHS & Sony 259 specifications).

AOU414L is a Green Product ordering option.

AOU414 and AOU414L are electrically identical.

G

D

S

Top View

Drain

Connected to

Tab

TO-251

G

D S

Alpha & Omega Semiconductor, Ltd.

Аналогичный номер детали - AOU414

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	AOU414	352Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	AOU4144	960Kb / 8P	N-Channel 30-V (D-S) MOSFET
Inchange Semiconductor ...	AOU4144	353Kb / 2P	isc N-Channel MOSFET Transistor

More results

Аналогичное описание - AOU414

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

AOU414 датащи(PDF) 1 Page - Alpha & Omega Semiconductors

AOU414 датащи(HTML) 1 Page - Alpha & Omega Semiconductors

Аналогичный номер детали - AOU414

Аналогичное описание - AOU414

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL