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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS75R12KE3 датащи(PDF) 2 Page - Infineon Technologies AG |
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FS75R12KE3 датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  Technische Information / technical information FS75R12KE3 IGBT-Module IGBT-Modules min. typ. max. - 0,26 - µs - 0,29 - µs - 0,03 - µs - 0,05 - µs - 0,42 - µs - 0,52 - µs - 0,07 - µs - 0,09 - µs - 1,65 2,15 V - 1,65 - V - 90 - A - 96 - A - 7,4 - µC - 13,5 - µC - 3,0 - mJ - 5,5 - mJ VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Transistor Wechselrichter / transistor inverter td,on Anstiegszeit (induktive Last) rise time (inductive load) IC= 75A, VCC= 600V tr VR= 600V, VGE= -15V, Tvj= 25°C IF= 75A, -diF/dt= 2200A/µs Durchlassspannung Charakteristische Werte / characteristic values IF= 75A, VGE= 0V, Tvj= 25°C IF= 75A, VGE= 0V, Tvj= 125°C Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 4,7Ω, Tvj= 125°C Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) VR= 600V, VGE= -15V, Tvj= 125°C VF forward voltage Rückstromspitze peak reverse recovery current IRM - - tf VGE= ±15V, RG= 4,7Ω, Tvj= 25°C VGE= ±15V, RG= 4,7Ω, Tvj= 125°C - 7,0 IC= 75A, VCC= 600V VGE= ±15V, RG= 4,7Ω, Tvj= 25°C m Ω Charakteristische Werte / characteristic values Eon IC= 75A, VCC= 600V, Lσ= 70nH VGE= ±15V, RG= 4,7Ω, Tvj= 125°C IC= 75A, VCC= 600V td,off VGE= ±15V, RG= 4,7Ω, Tvj= 25°C VGE= ±15V, RG= 4,7Ω, Tvj= 125°C IC= 75A, VCC= 600V - mJ - mJ Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip RCC´/EE´ Tc= 25°C 19 turn off energy loss per pulse Eoff IC= 75A, VCC= 600V, Lσ= 70nH VGE= ±15V, RG= 4,7Ω, Tvj= 125°C - 9,5 Diode Wechselrichter / diode inverter 2,5 Qr Ausschaltenergie pro Puls reverse recovery energy Erec VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C IF= 75A, -diF/dt= 2200A/µs - nH stray inductance module Modulinduktivität LσCE - SC data VCC= 900V, VCEmax= VCES - LσCE ·di/dt Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 4,7Ω, Tvj= 25°C VGE= ±15V, RG= 4,7Ω, Tvj= 125°C Kurzschlussverhalten tP ≤ 10µs, VGE ≤ 15V, TVj ≤ 125°C ISC - 300 - A Sperrverzögerungsladung recovered charge IF= 75A, -diF/dt= 2200A/µs 2 (8) DB_FS75R12KE3_3.0 .xls 2002-09-03 |
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