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STSPIN840 датащи(PDF) 18 Page - STMicroelectronics |
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STSPIN840 датащи(HTML) 18 Page - STMicroelectronics |
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18 / 28 page ![]() Detailed description STSPIN840 18/28 DocID031835 Rev 1 5.4 Device protections 5.4.1 Overcurrent and short-circuit protections The device has circuitry embedded to protect each power MOSFET against the overload and short-circuit conditions (short-circuit to ground, short-circuit to VS and short-circuit between outputs). When the overcurrent or the short-circuit protection is triggered the respective power stage is disabled and the relative EN\FAULT input is forced low through the integrated open-drain MOSFET discharging the external CEN capacitor (refer to Figure 9). The power stage is kept disabled and the open-drain MOSFET is kept ON until the EN\FAULT input falls below the VRELEASE threshold, then the CEN capacitor is charged through the external REN resistor. Figure 9. Overcurrent and short-circuit protections management The total disable time after an overcurrent event is set sizing properly the external network connected to EN\FAULT pins (refer to Figure 10) and it is the sum of the discharging and charging time of the CEN capacitor: Equation 2 tDIS = tdischarge + tcharge |
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