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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32G070KB датащи(PDF) 58 Page - STMicroelectronics |
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STM32G070KB датащи(HTML) 58 Page - STMicroelectronics |
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58 / 93 page  Electrical characteristics STM32G070CB/KB/RB 58/93 DS12766 Rev 2 5.3.10 Flash memory characteristics IDD(PLL) PLL power consumption on VDD(1) VCO freq = 96 MHz - 200 260 μA VCO freq = 192 MHz - 300 380 VCO freq = 344 MHz - 520 650 1. Guaranteed by design. 2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared between the two PLLs. Table 39. PLL characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 40. Flash memory characteristics(1) Symbol Parameter Conditions Typ Max Unit tprog 64-bit programming time - 85 125 µs tprog_row Row (32 double word) programming time Normal programming 2.7 4.6 ms Fast programming 1.7 2.8 tprog_page Page (2 Kbyte) programming time Normal programming 21.8 36.6 Fast programming 13.7 22.4 tERASE Page (2 Kbyte) erase time - 22.0 40.0 tprog_bank Bank (128 Kbyte(2)) programming time Normal programming 1.4 2.4 s Fast programming 0.9 1.4 tME Mass erase time - 22.1 40.1 ms IDD(FlashA) Average consumption from VDD Programming 3 - mA Page erase 3 - Mass erase 3 - IDD(FlashP) Maximum current (peak) Programming, 2 µs peak duration 7- mA Erase, 41 µs peak duration 7 - 1. Guaranteed by design. 2. Values provided also apply to devices with less Flash memory than one 128 Kbyte bank Table 41. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Unit NEND Endurance TA = -40 to +85 °C 1 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 15 Years |
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