FDPC8016S datasheet(2/12 Pages) ONSEMI

2 / 12 page

November, 2019 − Rev. 6

Publication Order Number:

FDPC8016S/D

MOSFET - Dual N‐Channel,

Asymmetric,

POWERTRENCH) Power

Clip 25 V

FDPC8016S

General Description

This device includes two specialized N−Channel MOSFETs in a

dual package. The switch node has been internally connected to enable

easy placement and routing of synchronous buck converters. The

control MOSFET (Q1) and synchronous SyncFET

™ (Q2) have been

designed to provide optimal power efficiency.

Features

Q1: N-Channel

• Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A

• Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A

Q2: N-Channel

• Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A

• Max RDS(on) = 1.7 mW at VGS = 4.5 V, ID = 32 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load

Power Clip 56

(PQFN8 5x6)

CASE 483AR

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

N-Channel MOSFET

MARKING DIAGRAM

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

05OD 15OD

= Specific Device Code

$Y&Z&3&K

05OD

15OD

PIN1

Top View

Bottom View

ELECTRICAL CONNECTION

PIN ASSIGNMENT

LSG

V+

HSG

*PAD10 V+(HSD)

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