1.

Electrical Specifications

This section provides the electrical specifications of the MSCSM70HM05CAG device.

1.1

SiC MOSFET Characteristics

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM70HM05CAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

700

V

Continuous

drain current

349

A

278

Pulsed drain current

700

Gate-Source voltage

–10/25

V

Drain-Source ON resistance

6.4

mΩ

Power

dissipation

966

W

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM70HM05CAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristics Test Conditions

Min

Typ

Max

Unit

Zero gate

voltage drain

current

—

—

300

µA

Drain–Source

on resistance

—

5

6.4

mΩ

6.3

Gate threshold

voltage

1.9

2.4

—

V

Gate–Source

leakage current

—

—

300

nA

MSCSM70HM05CAG

Electrical Specifications

Datasheet

DS00003927A-page 3