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MSC010SDA070B датащи(PDF) 3 Page - Microchip Technology

номер детали MSC010SDA070B
подробное описание детали  Zero Recovery Silicon Carbide Schottky Diode
PDF  12 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MSC010SDA070B датащи(HTML) 3 Page - Microchip Technology

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1.2
Electrical Performance
The following table shows the static characteristics of the MSC010SDA070B device. TJ = 25 °C unless otherwise
specified.
Table 1-3. Static Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VF
Forward voltage
IF = 10 A, TJ = 25 °C
1.5
1.8
V
IF = 10 A, TJ = 175 °C
1.8
IRM
Reverse leakage current
VR = 700 V, TJ = 25 °C
3
200
µA
VR = 700 V, TJ = 175 °C
15
QC
Total capacitive charge
VR = 400 V
27
nC
CJ
Junction capacitance
VR = 1 V, f = 1 MHz
353
pF
VR = 200 V, f = 1 MHz
54
VR = 400 V, f = 1 MHz
46
1.3
Typical Performance Curves
This section shows the typical performance curves of the MSC010SDA070B device.
Figure 1-1. Maximum Transient Thermal Impedance
MSC010SDA070B
Device Specifications
© 2021 Microchip Technology Inc.
Datasheet
DS-00003878A-page 3



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