BC856 datasheet(2/12 Pages) FUTUREWAFER

номер детали	BC856

подробное описание детали	PNP Silicon Epitaxial General Purpose Transistors

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производитель	FUTUREWAFER [FutureWafer Tech Co.,Ltd]

домашняя страница	http://futurewafer.com.tw/

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2 / 12 page

Document Number:F51841P

21-May-2021 V 2.0

www.futurewafer.com.tw

BC856 / BC857 / BC858

PNP Silicon Epitaxial

General Purpose Transistors

4. Electrical Characteristics (TA=25

C unless otherwise noted)

Symbol

Min.

Typ.

Max.

Units

Parameter

Collector-Emitter Breakdown Voltage

IC = -10mA

BC856

V BR –CEO

-65

BC857

-45

BC858

-30

Emitter-Base Breakdown Voltage

IE = -1.0uA

BC856

V BR –EBO

-6

BC857

-6

BC858

-5

Collector-Base Breakdown Voltage

IC = -10uA

BC856

V BR –CBO

-80

BC857

-50

BC858

-30

Collector-Base Cutoff Current

VCB = 30V,TA = 25 °C

I CBO

-15

Emitter-Base Cutoff Current

VCB = 30V,TA = 25 °C

I EBO

-100

Parameter

Symbol

Min.

Typ.

Max.

Units

DC Current Gain

IC = -2.0mA,VCE = -5.0V

BC856A

hFE

125

250

BC857A

BC858A

BC856B

hFE

200

450

BC857B

BC858B

BC856C

hFE

420

800

BC857C

BC858C

Collector-Emitter Saturation Voltage, IC = -10mA,IB = -0.5mA

V CE(sat)

-0.30

Collector-Emitter Saturation Voltage, IC = -100mA,IB = -5.0mA

-0.65

Base-Emitter Voltage, IC = 2mA,VCE = 5V

V BE (ON)

0.6

0.75

Base-Emitter Voltage, IC = 10mA,VCE = 5V

0.82

5. On Characteristics

6. Small Signal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Units

Current Gain Bandwidth Product

IC = -10mA,VCE = -5.0V ,f = 100MHZ

100

Mhz

Output Capacitance

VCB = -10V,f = 1.0Mhz

Cob

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