1.

Electrical Specifications

This section provides the electrical specifications of the MSCSM170TAM23CTPAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM170TAM23CTPAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

1700

V

Continuous drain current

122

A

97

Pulsed drain current

240

Gate-Source voltage

–10/23

V

Drain-Source ON resistance

22.5

mΩ

Power dissipation

588

W

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM170TAM23CTPAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Zero gate voltage

drain current

—

20

200

µA

Drain–Source on

resistance

—

17.5

22.5

mΩ

—

31

—

Gate threshold

voltage

1.8

3.2

—

V

Gate–Source

leakage current

—

—

200

nA

MSCSM170TAM23CTPAG

Electrical Specifications

Datasheet

DS00003965A-page 3