1.

Electrical Specifications

The following sections show the electrical specifications of the MSCSM170HM087CAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM170HM087CAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

1700

V

Continuous drain current

238

A

189

Pulsed drain current

480

Gate-Source voltage

–10/23

V

Drain-Source ON resistance

11.3

mΩ

Power dissipation

1114

W

The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM170HM087CAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Zero gate voltage

drain current

—

40

400

µA

Drain-Source on

resistance

—

8.8

11.3

mΩ

—

15.4

—

Gate threshold

voltage

1.8

3.2

—

V

Gate-Source

leakage current

—

—

400

nA

MSCSM170HM087CAG

Electrical Specifications

Datasheet

DS00003994A-page 3