FDMS8350LET40 datasheet(2/8 Pages) ONSEMI

2 / 8 page

FDMS8350LET40

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THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

RqJC

Thermal Resistance, Junction to Case

1.2

°C/W

RqJA

Thermal Resistance, Junction to Ambient (Note 1a)

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown Voltage

ID = 250 mA, VGS = 0 V

DBVDSS

/DTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 mA, referenced to 25°C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 32 V, VGS = 0 V

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 mA

1.0

1.8

3.0

DVGS(th)

/DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 mA, referenced to 25°C

−6

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 47 A

0.68

0.85

VGS = 4.5 V, ID = 38 A

0.96

1.2

VGS = 10 V, ID = 47 A, TJ = 150°C

1.1

1.4

gFS

Forward Transconductance

VDS = 5 V, ID = 47 A

247

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VDS = 20 V, VGS = 0 V, f = 1 MHz

11850

16590

Coss

Output Capacitance

3430

4805

Crss

Reverse Transfer Capacitance

100

Gate Resistance

0.1

1.2

2.4

SWITCHING CHARACTERISTICS

td(on)

Turn-On Delay Time

VDD = 20 V, ID = 47 A, VGS = 10 V,

RGEN = 6 W

Rise Time

td(off)

Turn-Off Delay Time

118

Fall Time

Total Gate Charge

VGS = 0 V to 10 V

156

219

VGS = 0 V to 4.5 V

102

Qgs

Gate to Source Charge

VDD = 20 V, ID = 47 A

Qgd

Gate to Drain “Miller” Charge

VDD = 20 V, ID = 47 A

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