FDMC010N08C datasheet(3/7 Pages) ONSEMI

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Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 64 V, VGS = 0 V

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 90 μA

2.0

2.9

4.0

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 90 μA, referenced to 25 °C

-8

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 16 A

8.0

VGS = 6 V, ID = 8 A

12.3

VGS = 10 V, ID = 16 A, TJ = 125 °C

gFS

Forward Transconductance

VDS = 5 V, ID = 16 A

Ciss

Input Capacitance

VDS = 40 V, VGS = 0 V,

f = 1 MHz

1070

1500

Coss

Output Capacitance

381

530

Crss

Reverse Transfer Capacitance

Gate Resistance

0.1

0.4

0.7

td(on)

Turn-On Delay Time

VDD = 40 V, ID = 16 A,

VGS = 10 V, RGEN = 6 Ω

919

Rise Time

310

td(off)

Turn-Off Delay Time

Fall Time

510

Total Gate Charge

VGS = 0 V to 10 V

VDD = 40 V,

ID = 16 A

Total Gate Charge

VGS = 0 V to 6 V

Qgs

Gate to Source Charge

Qgd

Gate to Drain “Miller” Charge

Qoss

Output Charge

VDD = 40 V, VGS = 0 V

22.1

Qsync

Total Gate Charge Sync

VDS = 0 V, ID = 16 A

13.3

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2 A

(Note 2)

0.7

1.2

VGS = 0 V, IS = 16 A

(Note 2)

0.8

1.3

trr

Reverse Recovery Time

IF = 8 A, di/dt = 300 A/μs

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

IF = 8 A, di/dt = 1000 A/μs

Qrr

Reverse Recovery Charge

Notes:

1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. EAS of 96 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 8 A, VDD = 72 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 25 A.

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

53 °C/W when mounted on

a 1 in2pad of 2 oz copper

125 °C/W when mounted

on a minimum pad of 2 oz

copper

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