LM3404B datasheet(2/5 Pages) LEIDITECH

2 / 5 page

Rev : 01.0

7.2021

www.leiditech.com

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V,

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

±100

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.2

1.5

2.5

RDS(on)

Static Drain-Source on-Resistance note2

VGS=10V, ID=4A

mΩ

VGS=4.5V, ID=3A

Ciss

Input Capacitance

VDS=15V, VGS=0V,

f=1.0MHz

233

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Total Gate Charge

VDS=15V, ID=2A,

VGS=10V

Qgs

Gate-Source Charge

0.5

Qgd

Gate-Drain(“Miller”) Charge

0.8

td(on)

Turn-on Delay Time

VDS=15V,

ID=4A, RGEN=3Ω,

VGS=10V

Turn-on Rise Time

2.1

td(off)

Turn-off Delay Time

Turn-off Fall Time

3.2

Maximum Continuous Drain to Source Diode Forward Current

ISM

Maximum Pulsed Drain to Source Diode Forward Current

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=4A

1.2

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

LM3404B

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