LM2301B datasheet(2/3 Pages) LEIDITECH

номер детали	LM2301B

подробное описание детали	LCE P-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 3 page

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static

Drain-

source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-19.5

Gate-

source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.5

-0.9

Gate-

source leakage

IGSS

VDS =0V, VGS =

±8V

±100

Zero

gate voltage drain current

IDSS

VDS =-20V, VGS =0V

-1

µA

Drain-

source on-state resistance

RDS(on)

VGS =-4.5V, ID =-1.5A

0.085

0.100

Ω

VGS =-2.5V, ID =-1.5A

0.105

0.130

Forward

transconductance

gfs

VDS =-5V, ID =-2.8A

4.0

Dynamic

Input

capacitance

Ciss

VDS =-10V,VGS =0V,f =1MHz

405

Output

capacitance

Coss

Reverse

transfer capacitance

Crss

Total

gate charge

VDS =-10V,VGS =-4.5V,ID =-3A

5.5

VDS =-10V,VGS =-2.5V,ID =-3A

3.3

Gate-

source charge

Qgs

0.7

Gate-

drain charge

Qgd

1.3

Gate

resistance

f =1MHz

6.0

Ω

Turn-

on delay time

td(on)

VDD=-10V,

RL=10Ω, ID =-1A,

VGEN=-4.5V,Rg=1Ω

Rise

time

Turn-

off delay time

td(off)

Fall

time

Drain-source body diode characteristics

Continuous

source-drain diode current

TC=25

℃

-1.3

Pulse

diode forward current

ISM

-10

Body

diode voltage

VSD

IS=-0.7A

-0.8

-1.2

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed by design, not subject to production testing.

MOSFET ELECTRICAL CHARACTERISTICS

T =25

℃ unless otherwise specified

IV. Temperature Vs

RDS(ON) / VGS(th)

Rev :

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01.06.2018

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LM2301B

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