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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS75R12W2T7 датащи(PDF) 2 Page - Infineon Technologies AG |
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FS75R12W2T7 датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 11 page  Datasheet 2 V2.0 2020-05-12 FS75R12W2T7 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V ImplementierterKollektor-Strom Implementedcollectorcurrent ICN 75 A Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 65°C, Tvj max = 175°C ICDC 65 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 75 A VGE = 15 V VCE sat 1,55 1,69 1,77 t.b.d. V V V Tvj = 25°C Tvj = 125°C Tvj = 175°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,70 mA, VCE = VGE, Tvj = 25°C VGEth 5,15 5,80 6,45 V Gateladung Gatecharge VGE = -15 / 15 V, VCE = 600 V QG 1,25 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 2,0 Ω Eingangskapazität Inputcapacitance f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 15,1 nF Rückwirkungskapazität Reversetransfercapacitance f = 100 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,053 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V ICES 0,013 mA Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = -15 / 15 V RGon = 2,2 Ω td on 0,13 0,15 0,158 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 175°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 75 A, VCE = 600 V VGE = -15 / 15 V RGon = 2,2 Ω tr 0,03 0,038 0,04 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 175°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = -15 / 15 V RGoff = 2,2 Ω td off 0,27 0,35 0,39 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 175°C Fallzeit,induktiveLast Falltime,inductiveload IC = 75 A, VCE = 600 V VGE = -15 / 15 V RGoff = 2,2 Ω tf 0,12 0,21 0,27 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 175°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 75 A, VCE = 600 V, L σ = 35 nH di/dt = 1700 A/µs (Tvj = 175°C) VGE = -15 / 15 V, RGon = 2,2 Ω Eon 4,92 7,49 8,99 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 175°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 75 A, VCE = 600 V, L σ = 35 nH du/dt = 3000 V/µs (Tvj = 175°C) VGE = -15 / 15 V, RGoff = 2,2 Ω Eoff 5,47 8,27 9,67 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 175°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 260 240 A A Tvj = 150°C Tvj = 175°C tP ≤ 8 µs, tP ≤ 7 µs, Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proIGBT/perIGBT RthJH 0,803 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 175 °C |
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