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FP50R12W2T7 датащи(PDF) 3 Page - Infineon Technologies AG

номер детали FP50R12W2T7
подробное описание детали  EasyPIM??Modul mit TRENCHSTOP??IGBT7 und Emitter Controlled 7 Diode und NTC
PDF  14 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FP50R12W2T7 датащи(HTML) 3 Page - Infineon Technologies AG

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Datasheet
3
V2.0
2020-05-08
FP50R12W2T7
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

1200
 V
Dauergleichstrom
ContinuousDCforwardcurrent
IF

50
 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
IFRM

100
 A
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 175°C
I²t

300
250
 A²s
A²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
VF
1,72
1,59
1,52
t.b.d.
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 1700 A/µs (Tvj=175°C)
VR = 600 V
VGE = -15 V
IRM
48,2
65,5
77,8
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Sperrverzögerungsladung
Recoveredcharge
IF = 50 A, - diF/dt = 1700 A/µs (Tvj=175°C)
VR = 600 V
VGE = -15 V
Qr
4,36
7,52
9,82
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 50 A, - diF/dt = 1700 A/µs (Tvj=175°C)
VR = 600 V
VGE = -15 V
Erec
1,57
2,95
3,95
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
proDiode/perdiode
RthJH
1,20
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj op
-40
175
°C
Diode,Gleichrichter/Diode,Rectifier
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

1600
 V
DurchlassstromGrenzeffektivwertproChip
MaximumRMSforwardcurrentperchip
TH = 100°C
IFRMSM

50
 A
GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput
TH = 100°C
IRMSM

50
 A
StoßstromGrenzwert
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM

450
370
 A
A
Grenzlastintegral
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t

1010
685
 A²s
A²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
Tvj = 150°C, IF = 50 A
VF
1,09
V
Sperrstrom
Reversecurrent
Tvj = 150°C, VR = 1600 V
IR
0,18
mA
Wärmewiderstand,ChipbisKühlkörper
Thermalresistance,junctiontoheatsink
proDiode/perdiode
RthJH
1,24
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj op
-40
150
°C



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