LM3D45P02 datasheet(2/5 Pages) LEIDITECH

2 / 5 page

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-19

Zero Gate Voltage Drain Current

IDSS

VDS=-16V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.4

-0.6

-1.0

VGS=-4.5V, ID=-20A

5.8

VGS=-2.5V, ID=-20A

7.2

Drain-Source On-State Resistance

RDS(ON)

VGS=-1.8V, ID=-20A

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-20A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

3500

Output Capacitance

Coss

577

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

445

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V, RGEN=3Ω

VGS=-4.5V,RL=0.5Ω

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=-10V,ID=-20A,

VGS=-4.5V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-20A

-1.2

Diode Forward Current

(Note 2)

-45

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = -10A

di/dt = 100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

Rev :

www.leiditech.com

01.06.2014

2/5

LM3D45P02

LM3D45P02 датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM3D45P02 датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL