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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SCIMX6DP5AVT2AB датащи(PDF) 40 Page - NXP Semiconductors |
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SCIMX6DP5AVT2AB датащи(HTML) 40 Page - NXP Semiconductors |
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40 / 160 page  i.MX 6DualPlus/6QuadPlus Applications Processors Industrial Products, Rev. 3, 11/2018 40 NXP Semiconductors Electrical Characteristics 4.6.4 RGMII I/O 2.5V I/O DC Electrical Parameters The RGMII interface complies with the RGMII standard version 1.3. The parameters in Table 22 are guaranteed per the operating ranges in Table 6, unless otherwise noted. Table 22. RGMII I/O 2.5V I/O DC Electrical Parameters1 1 Input Mode Selection: SW_PAD_CTL_GRP_DDR_TYPE_RGMII = 10 (1.8V Mode) SW_PAD_CTL_GRP_DDR_TYPE_RGMII = 11 (2.5V Mode). Parameter Symbol Test Conditions Min Max Units High-level output voltage1 VOH Ioh= -0.1 mA (DSE=001,010) Ioh= -1.0 mA (DSE=011,100,101,110,111) OVDD-0.15 —V Low-level output voltage1 VOL Iol= 0.1 mA (DSE=001,010) Iol= 1.0 mA (DSE=011,100,101,110,111) —0.15 V Input Reference Voltage Vref — 0.49xOVDD 0.51xOVDD V High-Level input voltage 2, 3 2 Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device. 3 To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s. VIH — 0.7xOVDD OVDD V Low-Level input voltage 2, 3 VIL —0 0.3xOVDD V Input Hysteresis(OVDD=1.8V) VHYS_HighVDD OVDD=1.8V 250 — mV Input Hysteresis(OVDD=2.5V) VHYS_HighVDD OVDD=2.5V 250 — mV Schmitt trigger VT+ 3, 4 4 Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled (register IOMUXC_SW_PAD_CTL_PAD_RGMII_TXC[HYS]= 0). VTH+ —0.5xOVDD — mV Schmitt trigger VT- 3, 4 VTH- — — 0.5xOVDD mV Pull-up resistor (22 k Ω PU) RPU_22K Vin=0V — 212 μA Pull-up resistor (22 k Ω PU) RPU_22K Vin=OVDD — 1 μA Pull-up resistor (47 k Ω PU) RPU_47K Vin=0V — 100 μA Pull-up resistor (47 k Ω PU) RPU_47K Vin=OVDD — 1 μA Pull-up resistor (100 k Ω PU) RPU_100K Vin=0V — 48 μA Pull-up resistor (100 k Ω PU) RPU_100K Vin=OVDD — 1 μA Pull-down resistor (100 k Ω PD) RPD_100K Vin=OVDD — 48 μA Pull-down resistor (100 k Ω PD) RPD_100K Vin=0V — 1 μA Keeper Circuit Resistance Rkeep — 105 165 k Ω Input current (no pull-up/down) Iin VI = 0,VI = OVDD -2.9 2.9 μA |
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