BSS138 datasheet(2/3 Pages) LEIDITECH

номер детали	BSS138

подробное описание детали	Plastic-Enhancement Mode Power MOSFET

PDF	3 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 3 page

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Gate-body leakage

IGSS

VDS =0V, VGS =±20V

±100

VDS =50V, VGS =0V

0.5

µA

Zero gate voltage drain current

IDSS

VDS =30V, VGS =0V

100

On characteristics

Gate-threshold voltage (note 1)

VGS(th)

VDS =VGS, ID =1mA

0.80

1.50

VGS =10V, ID =0.22A

2.0

Static drain-source on-resistance (note 1)

RDS(on)

VGS =4.5V, ID =0.22A

3.0

Ω

Forward transconductance (note 1)

gFS

VDS =10V, ID =0.22A

0.12

Dynamic characteristics (note 2)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

VDS =25V,VGS =0V, f=1MHz

Switching characteristics

Turn-on delay time (note 1,2)

td(on)

Rise time (note 1,2)

Turn-off delay time (note 1,2)

td(off)

Fall time (note 1,2)

VDD=30V, VDS=10V,

ID =0.29A,RGEN=6Ω

Drain-source body diode characteristics

Body diode forward voltage (note 1)

VSD

IS=0.44A, VGS = 0V

1.4

Notes:

Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.

These parameters have no way to verify.

T =25

℃ unless otherwise specified

BSS138

Rev :

www.leiditech.com

01.06.2015

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