APM9953 datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.1 - July., 2003

www.anpec.com.tw

APM9953

Notes

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

TA=25°C

2.5

Maximum Power Dissipation

TA=100°C

1.0

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

RθJA*

Thermal Resistance Junction to Ambient

62.5

°C/W

APM9953

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

BVDSS Drain-Source Breakdown

Voltage

VGS=0V , IDS=-250µA

-20

IDSS

Zero Gate Voltage Drain

Current

VDS=-16V , VGS=0V

-1

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250µA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=±8V , VDS=0V

±100

VGS=-10V , IDS=-3A

100

RDS(ON)=

Drain-Source On-state

Resistance

VGS=-4.5V , IDS=-2A

125

mΩ

VSD=

Diode Forward Voltage

ISD=-0.5A , VGS=0V

-0.7

-1.3

Dynamic>

Total Gate Charge

5.3

6.9

Qgs

Gate-Source Charge

1.04

Qgd

Gate-Drain Charge

VDS=-10V , IDS=-3A

VGS=-4.5V

0.62

td(ON)

Turn-on Delay Time

21.5

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

69.5

Turn-off Fall Time

VDD=-10V , IDS=-3A ,

VGEN=-4.5V , RG=6Ω

57.5

Ciss

Input Capacitance

552

Coss

Output Capacitance

118

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=-15V

Frequency=1.0MHz

Electrical Characteristics (T

A = 25°C unless otherwise noted)

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