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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AOD413 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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AOD413 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor AOD413 FEATURES · Drain Current : ID= -12A@ TC=25℃ · Drain Source Voltage : VDSS= -40V(Min) · Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -40 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -12 A IDM Drain Current-Single Pluse -30 A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃ /W |
Аналогичный номер детали - AOD413 |
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Аналогичное описание - AOD413 |
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ссылки URL |
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