IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

Note 1

45

S

C

iss

9400

pF

C

oss

V

1280

pF

C

rss

460

pF

t

d(on)

45

ns

t

r

V

V

60

ns

t

d(off)

R

120

ns

t

f

45

ns

Q

g(on)

330

nC

Q

gs

V

V

55

nC

Q

gd

155

nC

R

thJC

0.30

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

55N50

55

A

50N50

50

A

I

SM

Repetitive;

55N50

220

A

pulse width limited by T

JM

50N50

200

A

V

SD

I

1.5

V

t

rr

250

ns

Q

RM

1.0

µC

I

RM

10

A

I

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

50N50 I

55N50 I

IXFR 50N50

IXFR 55N50

ISOPLUS 247 OUTLINE

See IXFK55N50 data sheet for

characteristic curves.