AFSC5G35E38T2 datasheet(6/16 Pages) NXP

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RF Device Data

NXP Semiconductors

AFSC5G35E38

Table 6. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests — 3400 MHz (1) (In NXP Doherty Production ATE (2) Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ1A =12 mA,

IDQ2A =47 mA, VGS1B =(Vt – 0.31) Vdc, VGS2B =(Vt – 0.30) Vdc, Pout = 7 W Avg., 1--tone CW, f = 3400 MHz.

Gain

29.0

30.1

—

Drain Efficiency

D

38.0

43.0

—

Pout @ 3 dB Compression Point

P3dB

43.7

44.8

—

dBm

Functional Tests — 3600 MHz (1) (In NXP Doherty Production ATE (2) Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ1A =12 mA,

IDQ2A =47 mA, VGS1B =(Vt – 0.31) Vdc, VGS2B =(Vt – 0.30) Vdc, Pout = 7 W Avg., 1--tone CW, f = 3600 MHz.

Gain

29.3

30.5

—

Drain Efficiency

D

38.0

43.1

—

Pout @ 3 dB Compression Point

P3dB

44.7

45.7

—

dBm

Wideband Ruggedness (3) (In NXP Doherty Power Amplifier Module Reference Circuit, 50 ohm system) IDQ1A =12 mA, IDQ2A =47 mA,

VGSP1 =1.20 Vdc, VGSP2 = 1.16 Vdc, f = 3500 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR

ISBW of 400 MHz at 31 Vdc, 3 dB Input Overdrive from 7 W Avg.

Modulated Output Power

No Device Degradation

Typical Performance (3) (In NXP Doherty Power Amplifier Module Reference Circuit, 50 ohm system) VDD =30 Vdc, IDQ1A =12 mA,

IDQ2A =47 mA, VGSP1 =1.20 Vdc, VGSP2 =1.16 Vdc, Pout = 7 W Avg., 3500 MHz

VBW Resonance Point, 2--tone, 1 MHz Tone Spacing

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

190

—

MHz

Quiescent Current Accuracy over Temperature (4)

with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 1

with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 2

IQT

—

1.0

2.0

—

1--carrier 20 MHz LTE, 8 dB Input Signal PAR

Gain

—

30.8

—

Power Added Efficiency

PAE

—

42.0

—

Adjacent Channel Power Ratio

ACPR

—

–28.0

—

dBc

Adjacent Channel Power Ratio

ALT1

—

–42.0

—

dBc

Adjacent Channel Power Ratio

ALT2

—

–52.0

—

dBc

Gain Flatness (5)

—

0.7

—

Fast CW, 27 ms Sweep

Pout @ 3 dB Compression Point

P3dB

—

46.0

—

dBm

AM/PM @ P3dB



—

–20

—



Gain Variation @ Avg. Power over Temperature

(–40C to +105C)

G

—

0.032

—

dB/C

P3dB Variation over Temperature

(–40C to +105C)

P3dB

—

0.012

—

dB/C

Table 7. Ordering Information

Device

Tape and Reel Information

Package

AFSC5G35E38T2

T2 Suffix = 2,000 Units, 24 mm Tape Width, 13--inch Reel

10 mm  6 mm Module

1. Part input and output matched to 50 ohms.

2. ATE is a socketed test environment.

3. All data measured in fixture with device soldered in NXP reference circuit.

4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

Control for the RF Integrated Circuit Device Family.Goto http://www.nxp.com/RF and search for AN1977 or AN1987.

5. Gain flatness = Max(G(fLow to fHigh)) – Min(G(fLow to fHigh))

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